All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride
نویسندگان
چکیده
This report is on the electrical properties of all-amorphous junction field-effect transistors (JFETs) based n-type zinc oxynitride (ZnON) as a channel material and room-temperature deposited p-type ZnCo2O4 (ZCO) heterojunction gate. Devices with different thicknesses are thereby compared. Best devices 48 nm layer thickness achieve drain current on/off–ratios 105 low subthreshold swing 134 mV dec−1 within gate voltage sweep less than 2 V. The mobility extraction reliable for 90 nm-thick channels yielding saturation values over 50 cm2 V−1 s−1. For JFETs an overestimation due to deviations from ideal transistor characteristics determined.
منابع مشابه
AlkoxyFunctionalized ThienylVinylene Polymers for FieldEffect Transistors and AllPolymer Solar Cells
In the last decade, π-conjugated polymeric materials have emerged as promising semiconductors for low-cost organic optoelectronic applications, such as organic thin-fi lm transistors (OTFTs) [ 1 ] and photovoltaics (OPVs) [ 2 ] to cite two device categories. Planar π-conjugated building blocks represent a key target for highperformance polymeric semiconductors, since π-system planarization faci...
متن کاملPolyphosphonium-based ion bipolar junction transistors.
Advancements in the field of electronics during the past few decades have inspired the use of transistors in a diversity of research fields, including biology and medicine. However, signals in living organisms are not only carried by electrons but also through fluxes of ions and biomolecules. Thus, in order to implement the transistor functionality to control biological signals, devices that ca...
متن کاملDigital Devices Based on Complementary Junction Field Effect Transistors
Now CMOS transistors are widespread component basis for digital integrated circuits. But its have a disadvantage that is high sensitiveness to environment effects such as temperature and radiation. The disadvantage restrains using CMOS IC in electronics equipment worked in extremal conditions. There is a alternative component basis that is junction field effect transistors (JFET) which possesse...
متن کاملfabrication of new ion sensitive field effect transistors (isfet) based on modification of junction-fet for analysis of hydronium, potassium and hydrazinium ions
a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...
Strain-gated piezotronic transistors based on vertical zinc oxide nanowires.
Strain-gated piezotronic transistors have been fabricated using vertically aligned ZnO nanowires (NWs), which were grown on GaN/sapphire substrates using a vapor-liquid-solid process. The gate electrode of the transistor is replaced by the internal crystal potential generated by strain, and the control over the transported current is at the interface between the nanowire and the top or bottom e...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2021
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202000883